isc N-Channel MOSFET Transistor

·FEATURES · Drain-source on-resistance: RDS(on) ≤ 6.3Ω@10V ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply

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ISC

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isc N-Channel MOSFET Transistor

·FEATURES · Drain-source on-resistance: RDS(on) ≤ 6.3Ω@10V ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply

文件：348.18 Kbytes 頁數(shù)：2 Pages

ISC

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N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

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FAIRCHILD

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800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：659.15 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體