400V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：715.08 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel QFET? MOSFET -400 V, -1.56 A, 6.5 Ω

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：872.69 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

P-Channel QFET MOSFET -400 V, -1.56 A, 6.5

文件：702.95 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：FQD2P40；Package：D-PAK；P-Channel QFET? MOSFET -400 V, -1.56 A, 6.5 Ω

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：872.69 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

功率 MOSFET，P 溝道，QFET?，-400 V，-1.56 A，6.5 ?，DPAK

該 P 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)模式電源、音頻放大器、直流電機(jī)控制和可變開關(guān)電源應(yīng)用。 ?-1.56 A、-400 V、RDS(on)= 6.5Ω（最大值），需 VGS = -10 V、ID = -0.78 A柵極電荷低（典型值：10nC)\n?低 Crss（典型值6.5pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

400V P-Channel MOSFET

文件：646.18 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel QFET MOSFET -400 V, -1.56 A, 6.5

文件：702.95 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體