500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

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500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior swit

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500V N-Channel MOSFET

文件：767.95 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

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500V N-Channel MOSFET

文件：767.95 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

500V N-Channel MOSFET

文件：767.95 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

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Power MOSFET, N-Channel, QFET?, 500 V, 13.5 A, 480 mΩ, TO-3P

這些 N 溝道增強型功率場效應(yīng)晶體管采用飛兆專有的平面條形 DMOS 技術(shù)生產(chǎn)。這一先進技術(shù)是專為最大限度地降低導通電阻，提供卓越的開關(guān)性能，以及在雪崩擊穿和換相情況下承受高能量脈沖而開發(fā)的。這些器件非常適合高效開關(guān)電源、功率因數(shù)校正和半橋拓撲的電子燈整流器。 ?13.5 A，500 V，RDS(on) = 480 mΩ（最大值），條件是 VGS = 10 V，ID = 6.75 A\n?低柵極電荷（典型值43 nC)\n?低 Crss（典型值20 pF)\n?100% 經(jīng)過雪崩擊穿測試除非另有說明，最大絕對額定值 TC = 25°C。\n?提高了 dv/dt 性能;

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功率 MOSFET，N 溝道，QFET?，F(xiàn)RFET?，500 V，15 A，480 mΩ，TO-3P

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進的 MOSFET 技術(shù)已專門定制用來降低導通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?15A, 500V, RDS(on)= 480mΩ（最大值）@VGS = 10 V, ID = 7.5A柵極電荷低（典型值：43nC)\n?低 Crss（典型值20pF)\n?100% 經(jīng)過雪崩擊穿測試\n?快速恢復體二極管（典型值100ns)\n?Fast recovery body diode (Typ. 100ns);

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