500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior swit

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無錫固電

500V N-Channel MOSFET

文件：767.95 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

500V N-Channel MOSFET

文件：767.95 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

500V N-Channel MOSFET

文件：767.95 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，QFET?，F(xiàn)RFET?，500 V，15 A，480 mΩ，TO-3P

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?15A, 500V, RDS(on)= 480mΩ（最大值）@VGS = 10 V, ID = 7.5A柵極電荷低（典型值：43nC)\n?低 Crss（典型值20pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?快速恢復(fù)體二極管（典型值100ns)\n?Fast recovery body diode (Typ. 100ns);

ONSEMI

安森美半導(dǎo)體