20V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON) ≦ 110mΩ@VGS =-4.5V ? RDS(ON) ≦ 150mΩ@VGS =-2.5V ? Super high density cell design for extremely low RDS(ON) ? In compliance with EU RoHS 2002/95/EC directives. ? Suffix -H indicates Halogen-free part, ex.FMS2301-H. Case : Molded plastic, SOT-23

文件：563.81 Kbytes 頁數：8 Pages

FORMOSA

美麗微半導體

P-Channel SMD MOSFET

Features ? Suffix -H indicates Halogen-free part, ex.FMS2301A-H. ? RDS(ON) ≦ 75mΩ@VGS =-4.5V ? RDS(ON) ≦ 95mΩ@VGS =-2.5V ? Super high density cell design for extremely low RDS(ON) ? In compliance with EU RoHS 2002/95/EC directives. ? Exceptional on-resistance and maximum DC current capabilit

文件：377.61 Kbytes 頁數：8 Pages

FORMOSA

美麗微半導體

Mosfets

FormosaMS

美麗微半導體

2.6Amps 20 Voltage P - Channel POWER MOSFET

文件：407.13 Kbytes 頁數：4 Pages

FCI

富加宜

P-Cha nnel Enhancement MOSFET

Features ? VDS=-20V, ID=-1.6A ? RDS(ON)=380mΩ@VGS=-4.5V(Typ.) ? RDS(ON)=520mΩ@VGS=-2.5V(Typ.) ? High Power and current handing capability ? Lead free product is acquired ? Surface Mount Package Main Applications ? Battery Protection ? Load Switch ? Power Management

文件：191.94 Kbytes 頁數：4 Pages

GWSEMI

唯圣電子