P-Cha nnel Enhancement MOSFET

Features ? VDS=-20V, ID=-1.6A ? RDS(ON)=380mΩ@VGS=-4.5V(Typ.) ? RDS(ON)=520mΩ@VGS=-2.5V(Typ.) ? High Power and current handing capability ? Lead free product is acquired ? Surface Mount Package Main Applications ? Battery Protection ? Load Switch ? Power Management

文件：191.94 Kbytes 頁(yè)數(shù)：4 Pages

GWSEMI

唯圣電子

20V P-Channel Enhancement-Mode MOSFET

文件：290.32 Kbytes 頁(yè)數(shù)：4 Pages

FS

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

文件：170.48 Kbytes 頁(yè)數(shù)：3 Pages

GHZTECH

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes 頁(yè)數(shù)：5 Pages

DGNJDZ

南晶電子

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes 頁(yè)數(shù)：4 Pages

KIA

可易亞半導(dǎo)體