N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

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FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applica

文件：550.05 Kbytes 頁數(shù)：5 Pages

FUJI

富士通

N-Channel enhancement mode power MOSFET

Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply

文件：302.65 Kbytes 頁數(shù)：7 Pages

FUJI

富士通

Damper diode (Diode modulation for Displays)

Damper Diodes (Diode modulation Type)

文件：33.39 Kbytes 頁數(shù)：2 Pages

SANKEN

三墾

Damper Diodes (Diode modulation Type)

Damper Diodes (Diode modulation Type)

文件：23.24 Kbytes 頁數(shù)：1 Pages

SANKEN

三墾

Damper diode (Diode modulation for Displays)

Damper Diodes (Diode modulation Type)

文件：33.39 Kbytes 頁數(shù)：2 Pages

SANKEN

三墾

High Power Flame-Proof type

High Power & Flame-Proof Type Ultra Miniature Style [ FMP Series ] INTRODUCTION The FMP Series Metal Film High Power Resistors are manufactured using a vacuum sputtering system to deposit multiple layers of mixed metal alloys and passivative materials onto a carefully treated high grade cer

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YAGEO

國巨

METAL FILM RESISTORS

APPLICATIONS ? All general purpose applications ? Power applications FEATURES ? Ultra miniature size ? Wide resistance range ? High power rating ? High stability ? PPAP ready (FMP-50) ? Flameproof coating equivalent to UL94V-0 ? RoHS compliant & halogen-free

文件：1.09523 Mbytes 頁數(shù)：16 Pages

YAGEO

國巨

Plastic-Encapsulate MOSFETS

General Description The MP3009 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：279.52 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

Plastic-Encapsulate MOSFETS

General Description The FMP3009G uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：285.8 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子