METAL FILM RESISTORS

APPLICATIONS ? All general purpose applications ? Power applications FEATURES ? Ultra miniature size ? Wide resistance range ? High power rating ? High stability ? PPAP ready (FMP-50) ? Flameproof coating equivalent to UL94V-0 ? RoHS compliant & halogen-free

文件：1.09523 Mbytes 頁數(shù)：16 Pages

YAGEO

國巨

2 mOhms ±1 3.5W Chip Resistor 2010 (5025 Metric) Automotive AEC-Q200, Current Sense, Moisture Resistant, Pulse Withstanding

Features ? Power rating up to 4 W at 70°C (1.5 mOhm) ? Constant current up to 50 A (1.5 mOhm) ? Standard pad size (2010) ? High pulse power rating ? Excellent long-term stability ? Mounting: Reflow- and IR-soldering ? AEC-Q200 qualification in preparation ? RoHS 2011/65/EU compliant App

文件：606.97 Kbytes 頁數(shù)：4 Pages

ISABELLENHUETTE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.3Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.56 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：571.53 Kbytes 頁數(shù)：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：495.37 Kbytes 頁數(shù)：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：568.93 Kbytes 頁數(shù)：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：561.49 Kbytes 頁數(shù)：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica

文件：537.45 Kbytes 頁數(shù)：5 Pages

FUJI

富士通

絲?。?a target="_blank" title="Marking" href="/p1/marking.html">P1；Package：SMD5；Switching diode

Features High reliability Small mold type High Speed switching Application High speed switching

文件：174.91 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/p1/marking.html">P1；Package：SMD5；Switching diode

FEATURES 1) A WIDE VARIETY OF CONFIGURATIONS ARE AVAILABLE. (UMD5, UMD6, SMD5, SMD6) 2) MULTIPLE DIODES IN ONE SMALL SURFACE MOUNT PACKAGE. 3) DIODE CHARACTERISTICS ARE MATCHED IN THE PACKAGE. Applications Ultra high speed switching

文件：83.1 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆