N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica

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isc N-Channel MOSFET Transistor

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功率MOSFET 600V-700V

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N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=6A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica

文件：547.53 Kbytes 頁數(shù)：5 Pages

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