| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>FHX；Package：PowerDI123；1.0W SURFACE MOUNT POWER ZENER DIODE 文件：375.29 Kbytes 頁數(shù)：4 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
絲?。?strong>FHX；Package：SOD-123FL；Silicon Planar Zener Diodes 文件：336.37 Kbytes 頁數(shù)：3 Pages | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY | ||
絲?。?strong>FHX；Package：SOD123FL；Silicon Planar Zener Diodes 文件：385.89 Kbytes 頁數(shù)：3 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲印：FHX；Silicon Planar Zener Diodes 文件：502.33 Kbytes 頁數(shù)：3 Pages | JUXING 廣東鉅興電子 | JUXING | ||
Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka 文件：155.21 Kbytes 頁數(shù)：4 Pages | FUJITSU 富士通 | FUJITSU | ||
Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka 文件：155.21 Kbytes 頁數(shù)：4 Pages | FUJITSU 富士通 | FUJITSU | ||
Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka 文件：155.21 Kbytes 頁數(shù)：4 Pages | FUJITSU 富士通 | FUJITSU | ||
Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka 文件：155.21 Kbytes 頁數(shù)：4 Pages | FUJITSU 富士通 | FUJITSU | ||
Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka 文件：155.21 Kbytes 頁數(shù)：4 Pages | FUJITSU 富士通 | FUJITSU | ||
Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka 文件：155.21 Kbytes 頁數(shù)：4 Pages | FUJITSU 富士通 | FUJITSU |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
DIODES/美臺(tái) |
24+ |
PowerDI123 |
786000 |
全新原裝假一罰十 |
詢價(jià) | ||
DIODES/美臺(tái) |
2447 |
PowerDI123 |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
DIODES/美臺(tái) |
23+ |
UQFN404020 |
12730 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
DIODES/美臺(tái) |
21+ |
UQFN404020 |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
DIODES |
25+ |
SOD-123 |
6675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
DIODES/美臺(tái) |
21+ |
UQFN404020 |
3100 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價(jià) | ||
DIODES(美臺(tái)) |
23+ |
UQFN404020 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
DIODES |
22+ |
NA |
12080 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
DIODES/美臺(tái) |
ROHS .original |
UQFN404020 |
10490 |
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道 |
詢價(jià) | ||
DIODES/美臺(tái) |
22+ |
UQFN404020 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) |
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