Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 頁(yè)數(shù)：4 Pages

FUJITSU

富士通

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 頁(yè)數(shù)：4 Pages

FUJITSU

富士通

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 頁(yè)數(shù)：4 Pages

FUJITSU

富士通

GaAs HEMTs

The FHX35X is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance ? Low Noise Figure: 1.2dB (Typ.)@f=12GHz\n? High Associated Gain: 10.0dB (Typ.)@f=12GHz\n? Lg ≤ 0.25μm, Wg = 280μm\n? Gold Gate Metallization for High Reliability;

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