雙 P 溝道，Power Trench? MOSFET，30V，-2.9A，130mΩ

此P溝道MOSFET是采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)的穩(wěn)固柵極版本。 它已針對需要大范圍柵極驅(qū)動電壓額定值(4.5V – 25V)的電源管理應(yīng)用進(jìn)行了優(yōu)化。 ?-2.9 A, -30 V\n?RDS(on) = 130 mΩ@ VGS = -10 V\n?RDS(on) = 200 mΩ @ VGS = -4.5 V\n?低柵極電荷（2.5nC典型值）\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低 RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

Dual 30V P-Channel PowerTrench MOSFET

文件：73.89 Kbytes 頁數(shù)：6 Pages

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仙童半導(dǎo)體

Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：107.4 Kbytes 頁數(shù)：7 Pages

IRF

HEXFET? Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：206.63 Kbytes 頁數(shù)：7 Pages

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ULTRA LOW ON RESISTANCE

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