絲?。?strong>FDS6912；Package：SO-8；Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET

General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c

文件：176.41 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c

文件：219.88 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

文件：76.47 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

雙 N 溝道，邏輯電平，PWM 優(yōu)化，PowerTrench? MOSFET，30V，6A，28mΩ

這些N溝道邏輯電平MOSFET經(jīng)過專門設(shè)計(jì)，采用同步或常規(guī)開關(guān)PWM控制器提高DC/DC轉(zhuǎn)換器的整體效率。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 因此，這是一款更易于驅(qū)動且更安全（在高頻段也是如此）的MOSFET，可實(shí)現(xiàn)具有更高總效率的DC/DC電源設(shè)計(jì)。 6 A，30 V。 RDS(ON) = 0.028。 @ VGS = 10 V RDS(ON) = 0.042 。 @ VGS = 4.5 V。\n 優(yōu)化用于切換使用脈寬調(diào)制(PWM)控制器的DC/DC轉(zhuǎn)換器\n 極快速開關(guān)\n 低柵極電荷;

ONSEMI

安森美半導(dǎo)體

Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET

General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c

文件：176.41 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fds6912a/marking.html">FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchò MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：224.24 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fds6912a/marking.html">FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features ? Fast switching speed ? Low gate charge ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON)

文件：387.35 Kbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：222.94 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

文件：76.47 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體