Dual 30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench? process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Features ? –7 A, –30 V RDS(ON)= 23 m

文件：113.21 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual 30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features ? –7 A, –30 V RDS(ON)= 23 m?

文件：122.67 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual 30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench? process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Features ? –7 A, –30 V RDS(ON)= 23 m

文件：113.21 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual 30 Volt P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other

文件：154.04 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：4935；Package：SOP-8；Dual P-Channel MOSFET

文件：2.66814 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

Dual P-Channel 30-V (D-S) MOSFET

文件：1.02651 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05747 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

雙 P 溝道，PowerTrench? MOSFET，- 30V，-7A，23mΩ

此P溝道MOSFET是采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)的穩(wěn)固柵極版本。 它已針對廣泛柵極驅(qū)動電壓額定值(4.5V – 20V)的電源管理應(yīng)用進行了優(yōu)化。 ?-7A, -30V\n?RDS(ON) = 23 mΩ @ VGS = -10V\n?RDS(ON) = 35 mΩ @ VGS = -4.5V\n?低柵極電荷（15nC，典型值）\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的 RDS(on)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

雙 P 溝道，PowerTrench? MOSFET，- 30V，-6.9A，22mΩ

該P溝道MOSFET特別為提高DC/DC轉(zhuǎn)換器的整體效率而設(shè)計，采用同步或傳統(tǒng)開關(guān)脈寬調(diào)制(PWM)控制器及電池充電器。 與其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 結(jié)果是MOSFET易于驅(qū)動，并且驅(qū)動安全性更高（即使在非常高的頻率），而且DC/DC電源設(shè)計具有更高的整體效率。 ?–6.9 A，–30 V\n?RDS(ON) = 22 mΩ @ VGS = –10 V\n?RDS(ON) = 35 mΩ @ VGS = - 4.5 V\n?擴展了VGSS范圍(-25V)，適合電池應(yīng)用\n?靜電放電(ESD)保護二極管（注3）\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體