isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

無錫固電

60V N-Channel MOSFET

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FAIRCHILD

仙童半導體

功率 MOSFET，N 溝道，UniFETTM，60 V，55 A，22 mΩ，TO-220F

這些N溝道增強模式功率場效應晶體管采用飛兆專有的平面條形DMOS技術生產(chǎn)。這一先進技術是專為最大限度地降低通態(tài)電阻，提供卓越開關性能，以及在雪崩和交換模式下承受高能量脈沖而定制的。 這些器件非常適合高效開關電源、有源功率因數(shù)校正以及基于半橋拓撲的電子燈鎮(zhèn)流器。 ?55A、60V、RDS(on) = 0.022? @VGS = 10 V\n?低柵極電荷（典型值30 nC）\n?低Crss（典型值60pF）\n?快速開關;

ONSEMI

安森美半導體

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半導體

60V N-Channel MOSFET

文件：608.02 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

60V N-Channel MOSFET

文件：608.02 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體