N-Channel PowerTrench? MOSFET 80 V, 42 A, 3.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switch

文件：261.779 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，80V，122A，3.9mΩ

該N溝道MOSFET專為使用同步或傳統(tǒng)開關(guān)PWM控制器來(lái)改進(jìn)總體效率和在最大程度上減少DC/DC轉(zhuǎn)換器的開關(guān)結(jié)點(diǎn)振鈴而設(shè)計(jì)。已經(jīng)針對(duì)低柵極電荷、低rDS(on)、快速開關(guān)速度和軟體二極管反向恢復(fù)性能進(jìn)行了優(yōu)化。 ?VGS = 10V，ID = 19A時(shí)，最大rDS(on) = 3.9mΩ\n?最大rDS(on) = 5.5 mΩ （VGS = 8 V, ID = 15.5 A）\n?先進(jìn)的封裝技術(shù)和硅技術(shù)相結(jié)合，實(shí)現(xiàn)了低rDS(on)和高效率\n?下一代增強(qiáng)型體二極管技術(shù)，專為軟恢復(fù)設(shè)計(jì)\n?MSL1耐用封裝設(shè)計(jì)\n?100%經(jīng)過(guò)UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel Dual CoolTM Power Trench? MOSFET 80 V, 60 A, 3.1 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：285.52 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁(yè)數(shù)：2 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

文件：5.92712 Mbytes 頁(yè)數(shù)：6 Pages

TECHPUBLIC

臺(tái)舟電子

N 溝道，雙 CoolTM 56 PowerTrench? MOSFET，80V，110A，3.1mΩ

此 N 溝道 MOSFET 采用飛兆先進(jìn)的 Power Trench? 工藝生產(chǎn)。先進(jìn)的硅技術(shù)和 Dual Cool? 封裝技術(shù)完美融合，可在提供最小 rDS(on)的同時(shí)通過(guò)極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。 ?Dual Cool? 頂側(cè)冷卻 PQFN 封裝\n?最大 rDS(on) = 3.1 mΩ（VGS = 10 V、ID = 24 A）\n?最大 rDS(on) = 4.0 mΩ（VGS = 8 V、ID = 21 A）\n?高性能技術(shù)可實(shí)現(xiàn)極低的 rDS(on)\n?100% 經(jīng)過(guò) UIL 測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體