N 溝道 PowerTrench? MOSFET 100V，60A，8mΩ

此N溝道MOSFET采用飛兆半導體先進的Power Trench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關性能而定制的。 ? Shielded Gate MOSFET Technology\n?VGS = 10V，ID = 13 A時，最大rDS(on) = 8mΩ\n?VGS = 6 V，ID = 9.5 A時，最大rDS(on) = 13.5mΩ\n?先進的封裝技術和硅技術相結合，實現(xiàn)了低rDS(on)和高效率\n?MSL1耐用封裝設計\n?100%經(jīng)過UIL測試\n?100%經(jīng)過Rg測試\n?符合RoHS標準;

ONSEMI

安森美半導體

N-Channel PowerTrench? MOSFET 100 V, 60 A, 8 m廓

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FAIRCHILD

仙童半導體

N-Channel Dual CoolTM Power Trench? MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：291.45 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數(shù)：2 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Primary DC-DC MOSFET ·Secondary Synchronous Rectifier ·Load Switch

文件：294.76 Kbytes 頁數(shù)：2 Pages

ISC

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