N-Channel PowerTrench? MOSFET 30 V, 60 A, 0.99 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on

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N-Channel PowerTrench? MOSFET 30 V, 100 A, 0.99 m廓

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仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，30V，267A，0.99mΩ

此N溝道MOSFET使用同步或傳統(tǒng)的開(kāi)關(guān)PWM控制器，專為提高DC/DC轉(zhuǎn)換器的整體效率并最大限度降低其開(kāi)關(guān)節(jié)點(diǎn)振鈴噪聲而設(shè)計(jì)。 已針對(duì)低柵極電荷和極低rDS(ON)進(jìn)行了優(yōu)化。 ?最大rDS(on) = 1.1 mO（VGS = 10 V, ID = 36 A）\n?最大rDS(on) = 1.6 mO（VGS = 4.5 V, ID = 32 A）\n?先進(jìn)的封裝技術(shù)和硅技術(shù)相結(jié)合，實(shí)現(xiàn)了低rDS(on)和高效率\n?MSL1耐用封裝設(shè)計(jì)\n?100%經(jīng)過(guò)UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

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安森美半導(dǎo)體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N-Channel Dual CoolTM PowerTrench? MOSFET 30 V, 100 A, 0.99 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N-Channel PowerTrench? MOSFET 30 V, 100 A, 0.99 m廓

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N 溝道，雙 CoolTM 56 PowerTrench? MOSFET，30V，100A，0.99mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 PowerTrench?工藝生產(chǎn)。先進(jìn)的硅技術(shù)和 Dual Cool? 封裝技術(shù)完美融合，可在提供最小 rDS(on)的同時(shí)通過(guò)極低的結(jié)至環(huán)境熱阻保持卓越的開(kāi)關(guān)性能。 ?Dual Cool? 頂側(cè)冷卻PQFN封裝\n?VGS = 10V，ID = 36A時(shí)，最大rDS(on) = 0.99mΩ\n?VGS = 4.5 V，ID = 32 A時(shí)，最大rDS(on) = 1.55mΩ\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n?符合 RoHS 標(biāo)準(zhǔn);

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安森美半導(dǎo)體