N 溝道，Power Trench? MOSFET，150V，9.4A，134mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?VGS = 10 V，ID = 2.8 A時(shí)，rDS(on) = 134 mΩ（最大值）\n?VGS = 6 V，ID = 2.4 A時(shí)，rDS(on) = 186 mΩ（最大值）\n?薄型 - 最大1 mm，采用Power 33封裝\n?100%經(jīng)過(guò)UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel Power Trench? MOSFET 150 V, 9.4 A, 134 m廓

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FAIRCHILD

仙童半導(dǎo)體

PROSLIC? SINGLE-CHIP FXS SOLUTION

Si3217x-C Features ? Complete FXS solution in 5 x 7 mm ? Performs all BORSCHT functions ? Ideal for short to medium loops ? Global programmability ? Internal balanced or unbalanced ringing ? Patented low power ringing ? Simplified configuration and diagnostics ? Supported by ProSLIC API

文件：653.56 Kbytes 頁(yè)數(shù)：47 Pages

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SINGLE-CHIP DUAL PROSLIC?

Si32260/1 Features ? Two complete FXS channels in a single 6 x 8 mm or 8 x 8 mm package ? Performs all BORSCHT functions ? Ideal for short- or long-loop applications ? Ultra low power consumption ? Internal balanced or unbalanced ringing ? Patented low power ringing ? Adaptive ringing ? S

文件：1.2334 Mbytes 頁(yè)數(shù)：59 Pages

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N-Channel Power Trench MOSFET

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FAIRCHILD

仙童半導(dǎo)體