SINGLE-CHIP DUAL PROSLIC?

Si32260/1 Features ? Two complete FXS channels in a single 6 x 8 mm or 8 x 8 mm package ? Performs all BORSCHT functions ? Ideal for short- or long-loop applications ? Ultra low power consumption ? Internal balanced or unbalanced ringing ? Patented low power ringing ? Adaptive ringing ? S

文件：1.2334 Mbytes 頁數(shù)：59 Pages

SKYWORKS

思佳訊

PROSLIC? SINGLE-CHIP FXS SOLUTION

Si3217x-C Features ? Complete FXS solution in 5 x 7 mm ? Performs all BORSCHT functions ? Ideal for short to medium loops ? Global programmability ? Internal balanced or unbalanced ringing ? Patented low power ringing ? Simplified configuration and diagnostics ? Supported by ProSLIC API

文件：653.56 Kbytes 頁數(shù)：47 Pages

SKYWORKS

思佳訊

N-Channel Enhancement MOSFET

文件：2.091719 Mbytes 頁數(shù)：5 Pages

KEXIN

科信電子

N-Channel Power Trench MOSFET

文件：239.46 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

150V N溝道Power Trench? MOSFET

這一N溝道MOSFET器件采用飛兆半導(dǎo)體的高級(jí)PowerTrench?工藝生產(chǎn)，該工藝專為實(shí)現(xiàn)rDS(on)、開關(guān)性能以及堅(jiān)固性而優(yōu)化。 ?VGS = 10 V且ID = 2.8A時(shí)，最大rDS(on) = 128 m? \n?VGS = 6 V且ID = 2.4A時(shí)，最大rDS(on) = 178 m? \n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n?在廣泛使用的表面貼裝封裝中可實(shí)現(xiàn)高功率和高電流處理能力\n?快速開關(guān)速度\n?100%經(jīng)過UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體