New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes 頁數(shù)：12 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，30V，75A，1.3mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗而定制的。 此器件非常適合需要在小空間內(nèi)實(shí)現(xiàn)低rDS(on)的應(yīng)用，例如高性能VRM、POL和Oring功能。 ? Max RDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A\n? Max RDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A\n? High performance technology for extremely low RDS(on)\n? Termination is Lead-free and RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fdmc8010et/marking.html">FDMC8010ET；Package：Power33；MOSFET ??N-Channel, POWERTRENCH

文件：577.41 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

N 溝道 Dual CoolTM 33 PowerTrench? MOSFET 30V，157A，1.28mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process. Advancements in both silicon and Dual Cool? package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient ther ? Dual Cool? Top Side Cooling PQFN package\n? Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A\n? Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A\n? High Performance Technology for Extremely Low rDS(on)\n? RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

N 溝道，PowerTrench? MOSFET，30V，174A，1.3mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench? 工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通電阻而定制的。 此器件非常適合需要在小空間內(nèi)實(shí)現(xiàn)低rDS(on)的應(yīng)用，例如高性能VRM、POL和Oring功能。 ?TJ額定值擴(kuò)展：175°C\n? 最大值 rDS(on) = 1.3 mΩ（VGS = 10 V，ID = 30 A）\n? 最大值 rDS(on) = 1.8 mΩ（VGS = 4.5 V，ID = 25 A）\n? 高性能溝道技術(shù)可實(shí)現(xiàn)極低的 rDS(on)\n?終端無引線且符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體