P 溝道，Power Trench? MOSFET，-30V，-20A，10mΩ

FDMC6679AZ設(shè)計(jì)用于最大限度地降低負(fù)載開關(guān)應(yīng)用中的損耗。 先進(jìn)的硅技術(shù)和封裝技術(shù)完美融合，提供了最低rDS(on)和ESD保護(hù)。 ?VGS = -10 V，ID = -11.5 A時(shí)，最大rDS(on) = 10 mΩ\n?VGS = -4.5 V，ID = -8.5 A時(shí)，最大rDS(on) = 18mΩ\n?HBM ESD保護(hù)等級典型值為8kV（注3）\n?為電池應(yīng)用提供了擴(kuò)展的VGSS電壓范圍(-25 V)\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n?高功率和高電流處理能力\n?終端無引線且符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

P-Channel PowerTrench? MOSFET -30 V, -20 A, 10 m廓

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FAIRCHILD

仙童半導(dǎo)體

30 Volt P-Channel PowerTrench MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

文件：69.08 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

30 Volt P-Channel PowerTrench? MOSFET

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FAIRCHILD

仙童半導(dǎo)體

P-Channel PowerTrench MOSFET -30V, -13A, 9mOhm

General Description This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：414 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體