Single N-Channel PowerTrench? MOSFET 30 V, 9 A, 21 m廓

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仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，30V，9A，21mΩ

該器件設(shè)計用于提供同步降壓轉(zhuǎn)換器的最高效率和熱性能。 低rDS(on)和柵極充電提供了卓越的開關(guān)性能。 ?在VGS = 10 V且ID = 9 A時，最大值rDS(on) = 21 m? \n?在VGS = 4.5 V且ID = 7 A時，最大值rDS(on) = 32 m? \n?薄型 - 最厚0.8mm - 采用新的MicroFET 2x2 mm封裝\n?無鹵素化合物和銻氧化物\n?符合RoHS標準;

ONSEMI

安森美半導(dǎo)體

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application ? DC — DC Buck Converters ? Load switch ? Power management ? Motor Control Portable Power Adaptors

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TECHPUBLIC

臺舟電子

N-Channel Power Trench? MOSFET 30 V, 16.9 A, 5.7 m

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仙童半導(dǎo)體

N-Channel Power Trench SyncFETTM

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仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 5.0 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast sw

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仙童半導(dǎo)體