N-Channel PowerTrench? MOSFET 30 V, 5.0 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast sw

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N 溝道，PowerTrench? MOSFET，30V，5.0mΩ

此N溝道MOSFET使用同步或傳統(tǒng)的開(kāi)關(guān)PWM控制器，專為提高DC/DC轉(zhuǎn)換器的整體效率并最大限度降低其開(kāi)關(guān)節(jié)點(diǎn)振鈴噪聲而設(shè)計(jì)。 已針對(duì)低柵極電荷、低rDS(ON) 和高速開(kāi)關(guān)進(jìn)行了優(yōu)化。 ?VGS = 10 V，ID = 19 A時(shí)，rDS(on) = 5.0 mΩ（最大值）\n?VGS = 4.5 V，ID = 15 A時(shí)，最大rDS(on) = 6.9 mΩ\n?先進(jìn)的封裝和硅設(shè)計(jì)，實(shí)現(xiàn)了低rDS(on)和高效率\n?增強(qiáng)型體二極管設(shè)計(jì)用于軟恢復(fù)，在同步降壓轉(zhuǎn)換器應(yīng)用中提供出色的性能。\n?MSL1耐用封裝設(shè)計(jì)\n?100%經(jīng)過(guò)UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

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N-Channel PowerTrench? SyncFET 30 V, 42 A, 4 m廓

General Description The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit o

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N 溝道，PowerTrench? SyncFET?，30V，42A，4mΩ

FDMS7672AS設(shè)計(jì)用于最大限度地降低功率轉(zhuǎn)換應(yīng)用中的損耗。 先進(jìn)的硅和封裝技術(shù)完美融合，在保持卓越開(kāi)關(guān)性能的同時(shí)，提供了最低的rDS(on)。 該器件可被額外作為一個(gè)有效的單片肖特基體二極管使用。 ?VGS = 10 V，ID = 18 A時(shí)，最大rDS(on) = 4.0 mΩ\n?VGS = 7 V，ID = 16 A時(shí)，最大rDS(on) = 4.5 mΩ\n?先進(jìn)的封裝技術(shù)和硅技術(shù)相結(jié)合，實(shí)現(xiàn)了低rDS(on)和高效率\n?SyncFET肖特基體二極管\n?MSL1耐用封裝設(shè)計(jì)\n?100%經(jīng)過(guò)UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

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安森美半導(dǎo)體