30V單N溝道PowerTrench? MOSFET

該器件設(shè)計(jì)用于提供同步降壓轉(zhuǎn)換器的最高效率和熱性能。 低rDS(on)和柵極充電提供了卓越的開(kāi)關(guān)性能。 ?VGS = 10 V且ID = 11 A時(shí)，最大rDS(on) = 15 m? \n?VGS = 4.5 V且ID = 9A時(shí)，最大rDS(on) = 22 m? \n?薄型 - 最厚0.8mm - 采用新的MicroFET 2x2 mm封裝\n?無(wú)鹵素化合物和銻氧化物\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Single N-Channel PowerTrench? MOSFET 30 V, 11 A, 15 m廓

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FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 3.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

文件：324.84 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? SyncFET 30 V, 42 A, 3 m廓

General Description The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

文件：486.58 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel 30V(D-S) Enhancement MOSFET

Application ? Load/Power switch ?Interfacing, logic switching ?Battery management for ultra protable: ?electronics

文件：1.05051 Mbytes 頁(yè)數(shù)：3 Pages

TECHPUBLIC

臺(tái)舟電子