N-Channel PowerTrench? MOSFET 30 V, 3.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

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N 溝道，PowerTrench? MOSFET，30V，3.8mΩ

此N溝道MOSFET使用同步或傳統(tǒng)的開關(guān)PWM控制器，專為提高DC/DC轉(zhuǎn)換器的整體效率并最大限度降低其開關(guān)節(jié)點振鈴噪聲而設(shè)計。 已經(jīng)針對低柵極電荷、低rDS(on)、快速開關(guān)速度和體二極管反向恢復(fù)性能進行了優(yōu)化。 ?VGS = 10 V，ID = 21 A時，最大rDS(on) = 3.8 mΩ\n?VGS = 4.5 V，ID = 17 A時，最大rDS(on) = 5.0 mΩ\n?先進的封裝和硅設(shè)計，實現(xiàn)了低rDS(on)和高效率\n?下一代先進體二極管技術(shù)，專為軟恢復(fù)設(shè)計在同步降壓轉(zhuǎn)換器應(yīng)用中以最低的EMI提供類似于肖特基二極管的性能。\n?MSL1耐用封裝設(shè)計\n?100%經(jīng)過UIL測試\n?符合RoHS標(biāo)準;

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安森美半導(dǎo)體

N-Channel PowerTrench? SyncFET 30 V, 42 A, 3 m廓

General Description The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

文件：486.58 Kbytes 頁數(shù)：8 Pages

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N-Channel 30V(D-S) Enhancement MOSFET

Application ? Load/Power switch ?Interfacing, logic switching ?Battery management for ultra protable: ?electronics

文件：1.05051 Mbytes 頁數(shù)：3 Pages

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臺舟電子

N-Channel PowerTrench? MOSFET 30 V, 3.8 m廓

文件：274.03 Kbytes 頁數(shù)：7 Pages

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仙童半導(dǎo)體

N 溝道，PowerTrench? SyncFET?，30V，42A，3mΩ

FDMS7670AS設(shè)計用于最大限度地降低功率轉(zhuǎn)換應(yīng)用中的損耗。 先進的硅和封裝技術(shù)完美融合，在保持卓越開關(guān)性能的同時，提供了最低的rDS(on)。 該器件可被額外作為一個有效的單片肖特基體二極管使用。 ?VGS = 10 V，ID = 21 A時，最大rDS(on) = 3.0 mΩ\n?VGS = 7 V，ID = 19 A時，最大rDS(on) = 3.2 mΩ\n?先進的封裝技術(shù)和硅技術(shù)相結(jié)合，實現(xiàn)了低rDS(on)和高效率\n?SyncFET肖特基體二極管\n?MSL1耐用封裝設(shè)計\n?100%經(jīng)過UIL測試\n?符合RoHS標(biāo)準;

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安森美半導(dǎo)體