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          首頁 >FDH>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDH3595

          High Conductance Low Leakage Diode

          High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics.

          文件:23.17 Kbytes 頁數(shù):3 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH3632

          N-Channel PowerTrench MOSFET

          Features ? rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 84nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distribute

          文件:310.36 Kbytes 頁數(shù):11 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH400

          High Voltage General PurPose Diodes

          High Voltage General Purpose Diode

          文件:36.39 Kbytes 頁數(shù):1 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH400

          D0-35

          D0-35

          文件:133.28 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          FDH444

          D0-35

          D0-35

          文件:133.28 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          FDH444

          High Voltage General PurPose Diodes

          High Voltage General Purpose Diode

          文件:36.39 Kbytes 頁數(shù):1 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH44N50

          44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET

          Features ? Low Gate Charge Qg results in Simple Drive Requirement ? Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ? Reduced rDS(ON) ? Reduced Miller Capacitance and Low Input Capacitance ? Improved Switching Speed with Low EMI ? 175°C Rated Junction Temperature

          文件:169.18 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH44N50

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 44A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

          文件:351.34 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          FDH45N50F

          N-Channel MOSFET

          FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

          文件:372.17 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          FDH45N50F

          N-Channel MOSFET

          FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

          文件:345.47 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            75

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            4

          • ID Max (A):

            80

          • PD Max (W):

            450

          • RDS(on) Max @ VGS = 10 V(mΩ):

            3.8

          • Qg Typ @ VGS = 10 V (nC):

            125

          • Ciss Typ (pF):

            8665

          • Package Type:

            TO-247-3

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          更多FDH供應(yīng)商 更新時(shí)間2026-1-19 9:03:00
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