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          首頁 >FDH>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDH20N40

          20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET

          Features ? Low Gate Charge Qg results in Simple Drive Requirement ? Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ? Reduced r DS(ON) ? Reduced Miller Capacitance and Low Input Capacitance ? Improved Switching Speed with Low EMI ? 175°C Rated Junction Temperature pp Switch Mo

          文件:188.33 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH20N40

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.216Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch

          文件:344.19 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FDH210N08

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 210A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

          文件:344.11 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FDH27N50

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

          文件:344.18 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FDH27N50

          27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET

          Features ? Low Gate Charge Qg results in Simple Drive Requirement ? Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ? Reduced rDS(ON) ? Reduced Miller Capacitance and Low Input Capacitance ? Improved Switching Speed with Low EMI ? 175°C Rated Junction Temperature Applications

          文件:183.13 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH300

          High Conductance Low Leakage Diode

          High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

          文件:235.1 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH300

          High Conductance Low Leakage Diodes

          High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

          文件:37.88 Kbytes 頁數(shù):1 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH333

          High Conductance Low Leakage Diodes

          High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

          文件:37.88 Kbytes 頁數(shù):1 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH333

          High Conductance Low Leakage Diode

          High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

          文件:235.1 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDH34N40

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 34A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.115Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch

          文件:344.39 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            75

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            4

          • ID Max (A):

            80

          • PD Max (W):

            450

          • RDS(on) Max @ VGS = 10 V(mΩ):

            3.8

          • Qg Typ @ VGS = 10 V (nC):

            125

          • Ciss Typ (pF):

            8665

          • Package Type:

            TO-247-3

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          更多FDH供應(yīng)商 更新時(shí)間2026-1-19 9:03:00
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