P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

文件：240.76 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well

文件：484.34 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

文件：240.76 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 30-V (D-S) MOSFET

文件：1.00601 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P 溝道，PowerTrench? MOSFET，2.5V 指定，-20V，-4.5A，43mΩ

此 P 溝道 2.5V 額定 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 PowerTrench 工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持低柵極電荷以獲得卓越開(kāi)關(guān)性能而定制的。這些器件非常適合負(fù)載開(kāi)關(guān)、電源管理、電池充電電路和 DC/DC 轉(zhuǎn)換等電池電源應(yīng)用。 ?最大值 rDS(ON)=43 mΩ，條件是 VGS=-4.5 V、ID=-4.5 A\n?最大值 rDS(ON)=68 mΩ，條件是 VGS=-2.5 V、ID=-3.8 A\n?低柵極電荷（典型值8nC）。\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的 rDS(on)\n?SuperSOT? -6 封裝：小尺寸（比標(biāo)準(zhǔn) SO¨C8 小 72%）超?。? mm 厚）。\n?符合 RoHS 標(biāo)準(zhǔn)\n?采用綠色封裝材料生產(chǎn)。\n?無(wú)鹵素;

ONSEMI

安森美半導(dǎo)體

P 溝道，PowerTrench? MOSFET，2.5V 指定，-20V，-4.5A，48mΩ

此N溝道2.5V額定MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開(kāi)關(guān)性能而定制的。這些器件非常適合電池供電應(yīng)用：負(fù)載開(kāi)關(guān)和功率管理、電池充電電路和DC/DC轉(zhuǎn)換。 ?–4.5 A, –20 V.RDS(ON) = 48 mΩ @ VGS = –4.5 VRDS(ON) = 65 mΩ @ VGS = –2.5 V\n?低柵極電荷（10 nC，典型值）\n? Low gate charge (10 nC typical)\n? High performance trench technology for extremely low RDS(ON)\n? SuperSOT ? –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick);

ONSEMI

安森美半導(dǎo)體