P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

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FAIRCHILD

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P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

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P-Channel 30-V (D-S) MOSFET

文件：1.00601 Mbytes 頁數(shù)：9 Pages

VBSEMI

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P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

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P 溝道，PowerTrench? MOSFET，2.5V 指定，-20V，-4.5A，48mΩ

此N溝道2.5V額定MOSFET采用飛兆半導體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。這些器件非常適合電池供電應用：負載開關(guān)和功率管理、電池充電電路和DC/DC轉(zhuǎn)換。 ?–4.5 A, –20 V.RDS(ON) = 48 mΩ @ VGS = –4.5 VRDS(ON) = 65 mΩ @ VGS = –2.5 V\n?低柵極電荷（10 nC，典型值）\n? Low gate charge (10 nC typical)\n? High performance trench technology for extremely low RDS(ON)\n? SuperSOT ? –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick);

ONSEMI

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