絲印：312F；Package：SOT23-6；Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Rosion) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

文件：2.10624 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺(tái)舟電子

Dual P-Channel 1.8V PowerTrench Specified MOSFET

文件：165.22 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

雙 P 溝道，PowerTrench? MOSFET，1.8V 指定，-12V，-2.5A，90mΩ

這些P溝道1.8V額定MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大程度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 ?-2.5A，-12V。 RDS(ON) = 90mΩ @ VGS = -4.5V RDS(ON) = 125mΩ @ VGS = -2.5V RDS(ON) = 200mΩ @ VGS = -1.8V\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?SuperSOT?-6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8小72%）；薄型（1mm厚）;

ONSEMI

安森美半導(dǎo)體

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a repl

文件：123.67 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual P-Channel Enhancement Mode MOSFET

Application Battery protection ? Load switch Power management ? Power Supply Converter Circuits

文件：2.37476 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺(tái)舟電子

Dual P-Channel, Digital FET

文件：217.71 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體