Digital FET, Dual P-Channel

General Description These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially f

文件：74.28 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

雙 P 溝道，數(shù)字 FET，-25V，-0.46A，1.1Ω

這些P溝道增強(qiáng)模式場效應(yīng)晶體管采用飛兆半導(dǎo)體專有的高單元密度、DMOS技術(shù)。 這種高密度工藝專為最大限度地降低低柵極驅(qū)動條件下的通態(tài)電阻而定制。 該器件特別為電池供電應(yīng)用設(shè)計，例如筆記本電腦和手機(jī)。 該器件即使在柵極驅(qū)動電壓低至2.5V時仍具有出色的通態(tài)電阻。 ?-25V、-0.46A（連續(xù)值）、-1.0A（峰值） \n?RDS(ON) = 1.5 Ω @ VGS= -2.7 V\n?RDS(ON) = 1.1 Ω @ VGS = -4.5 V\n?柵極驅(qū)動電平要求極低，從而可在3V電路中直接運(yùn)行。 VGS(th) < 1.5V。\n?柵-源齊納二極管增強(qiáng)耐靜電放電(ESD)能力。 >6kV人體模型;

ONSEMI

安森美半導(dǎo)體

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：227.13 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：227.13 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller

The HIP6304 multi-phase PWM control IC together with its companion gate drivers, the HIP6601, HIP6602 or HIP6603 and Intersil MOSFETs provides a precision voltage regulation system for advanced microprocessors. Features ? AMD Athlon? Compatible Multi-Phase Power Conversion ? Precision Channel C

文件：176.39 Kbytes 頁數(shù)：14 Pages

INTERSIL