N-Channel UniFETTM Ultra FRFETTM MOSFET

Description UniFET MOSFETis Fairchild Semicondu ctor’s high voltage MOSFET family based on planarstripeand DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide be tter switching performance andhigher avalanche energy strength. UniFET Ultra F RFET MOSFET

文件：558.65 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=38A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 120mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：328.83 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，UniFETTM，Ultra FRFETTM，300 V，38A，120 mΩ，D2PAK

UniFET? MOSFET 是飛兆半導(dǎo)體的高壓 MOSFET 系列產(chǎn)品，基于平面條形技術(shù)和 DMOS 技術(shù)。該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強(qiáng)度。UniFET Ultra FRFETTM MOSFET 具有非常卓越的體二極管反向恢復(fù)性能。其 trr小于 50 nsec 且反向 dv/dt 抗擾度為 20 V/nsec，而一般的平面 MOSFET 產(chǎn)品分別為 200 nsec 以上和 4.5 V/nsec。因此，UniFET Ultra FRFET MOSFET 在要求 MOSFET 體二極管性能改進(jìn)的某些應(yīng)用中可消除多余的元件，并提高系統(tǒng)的可靠性

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=38.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：363.43 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

300V N-Channel MOSFET

Description UniFET? MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

文件：742.1 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=38A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

文件：296.3 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電