200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Description ? 62A, 200V, RDS(on) = 22.9m? @VGS = 10 V ? Fast

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 27mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電

N 溝道，PowerTrench? MOSFET，200V，62A，27mΩ

該 N 溝道 MOSFET 采用飛兆半導(dǎo)體的 PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 22.9m? （典型值）@ VGS = 10V, ID = 31A\n?高性能溝道技術(shù)可實現(xiàn)極低的 RDS(on)\n?低柵極電荷\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

200V N-Channel PowerTrench MOSFET

文件：349.21 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：328.02 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Silicon Standard Recovery Diode

文件：602.86 Kbytes 頁數(shù)：3 Pages

GENESIC