75 V、80 A、3.9 m?、D2PAKN 溝道 PowerTrench?

N-Channel PowerTrench? MOSFET 75 V, 80 A, 3.9 m?, \nFairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ?rDS(ON) = 3.9 m? （典型值）、VGS = 10 V、ID = 80 A\n?Qg(tot) = 92nC （典型值），VGS = 10V\n?低米勒電荷\n?低 QRR體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合 AEC Q101 標(biāo)準(zhǔn)\n?符合 RoHS 標(biāo)準(zhǔn);

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N 溝道 PowerTrench? MOSFET 75V，80 A，4.5 mΩ

N-Channel PowerTrench? MOSFET 75 V, 80 A, 4.5 mΩ\nFairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ?RDS(on) = 3.9m? (Typ.) @ VGS = 10V, ID = 80A\n?QG(tot) = 92nC (Typ.) @ VGS = 10V\n?低米勒電荷\n?低 Qrr體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合 AEC Q101，以前的開發(fā)類型為 82684;

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