isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電

N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?

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FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 75V, 80A, 4.5m廓

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FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>FDB045AN08A0；Package：TO-263AB；N-Channel PowerTrench? MOSFET 75V, 80A, 4.5m

Features ? rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 92nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 ? RoHS Compliant Applications ? 42V Automotive Load Control ? Starter / Altern

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ONSEMI

安森美半導(dǎo)體

N 溝道 PowerTrench? MOSFET 75V，80 A，4.5 mΩ

N-Channel PowerTrench? MOSFET 75 V, 80 A, 4.5 mΩ\nFairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ?RDS(on) = 3.9m? (Typ.) @ VGS = 10V, ID = 80A\n?QG(tot) = 92nC (Typ.) @ VGS = 10V\n?低米勒電荷\n?低 Qrr體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合 AEC Q101，以前的開發(fā)類型為 82684;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 75V, 80A, 4.5m廓

文件：523.99 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 75V, 80A, 4.5m

文件：258.44 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 75V, 80A, 4.5m

文件：258.44 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體