Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

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IRF

BASE STATION ANTENNAS

文件：310.21 Kbytes 頁數(shù)：2 Pages

PULSE

Power MOSFET

文件：159.78 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET? Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A

Benefits\nLow Gate Charge Qg results in Simple Drive Requirement\nImproved Gate, Avalanche and dynamic dv/dt Ruggedness\nFully Characterized Capacitance and Avalanche Voltage and CurrentApplications\nSwitch Mode Power Supply ( SMPS )\nUninterruptable Power Supply\nHigh speed power switching

Infineon

英飛凌

蕭特基 (Schottky)(.5A 和以上)

Diodes

美臺半導(dǎo)體

Outdoor Antenna: Base Station - General

PULSE

普思

包裝：盒 類別：RF/IF，射頻/中頻和 RFID RF 天線 描述：ANTENNA WHIP RADIAL BS-WHP 3.6D

PulseLarsen Antennas

包裝：散裝 類別：五金件，緊固件，配件 墊圈 - 套管，凸肩 描述：SHOULDER WASHER, NATURAL,.196 IN

ESSENTRA

益升華

包裝：散裝 類別：五金件，緊固件，配件 墊圈 - 套管，凸肩 描述：SHOULDER WASHER, NATURAL,.219 IN

ESSENTRA

益升華