Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

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IRF

Power MOSFET

文件：159.78 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET? Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A

Benefits\nLow Gate Charge Qg results in Simple Drive Requirement\nImproved Gate, Avalanche and dynamic dv/dt Ruggedness\nFully Characterized Capacitance and Avalanche Voltage and CurrentApplications\nSwitch Mode Power Supply ( SMPS )\nUninterruptable Power Supply\nHigh speed power switching

Infineon

英飛凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =11A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.725Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：1.27172 Mbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：1.27172 Mbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體