絲?。?strong>F3B；Package：2-3U1A；Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

Notebook PC Applications Portable Equipment Applications ? Low drain-source ON resistance: RDS (ON) = 24 m? (typ.) ? High forward transfer admittance: |Yfs| = 14 S (typ.) ? Low leakage current: IDSS = ?10 μA (max) (VDS = ?20 V) ? Enhancement mode: Vth = ?0.5 to ?1.2 V

文件：224.05 Kbytes 頁(yè)數(shù)：7 Pages

TOSHIBA

東芝

絲?。?strong>F3B；Package：2-3U1A；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

文件：212.29 Kbytes 頁(yè)數(shù)：7 Pages

TOSHIBA

東芝

絲印：F3BF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Low proille package [deal for automated placement Glass passivated chip junction High forward surge capability Fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.49015 Mbytes 頁(yè)數(shù)：3 Pages

RFE

RFE international

絲?。?a target="_blank" title="Marking" href="/f3bf/marking.html">F3BF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Low proille package [deal for automated placement Glass passivated chip junction High forward surge capability Fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.49015 Mbytes 頁(yè)數(shù)：3 Pages

RFE

RFE international

Silicon Power Rectifiers

Edal Series F power rectifiers are stud mounted DO-5 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series F power rectifiers

文件：839.3 Kbytes 頁(yè)數(shù)：2 Pages

EDAL