PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

文件：35.79 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

文件：35.45 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

SAW Bandpass Filter

Features ● RF bandpass filter ● Usable bandwidth 0.6MHz ● No matching single-ended operation ● Ceramic Surface Mounted Device Package ( 5.0 mm × 5.0 mm )

文件：178.38 Kbytes 頁(yè)數(shù)：7 Pages

ITF

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：37.31 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet? process features gold metal for greatly extended lifetim

文件：35.9 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：35.84 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：36.07 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

Ceramic Disc Capacitors, Class 1, Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC, and 3 kVDC

FEATURES ? High reliability ? Low losses ? High capacitance in small size ? Kinked leads ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS In electronic circuits where low losses and high capacitance per volume are essential, for exa

文件：112.57 Kbytes 頁(yè)數(shù)：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ceramic Disc Capacitors, Class 1, Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC, and 3 kVDC

FEATURES ? High reliability ? Low losses ? High capacitance in small size ? Kinked leads ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS In electronic circuits where low losses and high capacitance per volume are essential, for exa

文件：112.57 Kbytes 頁(yè)數(shù)：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ceramic Disc Capacitors, Class 1, Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC, and 3 kVDC

FEATURES ? High reliability ? Low losses ? High capacitance in small size ? Kinked leads ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS In electronic circuits where low losses and high capacitance per volume are essential, for exa

文件：112.57 Kbytes 頁(yè)數(shù)：7 Pages

VISHAYVishay Siliconix

威世威世科技公司