SAW Bandpass Filter

Features ● RF bandpass filter ● Usable bandwidth 0.6MHz ● No matching single-ended operation ● Ceramic Surface Mounted Device Package ( 5.0 mm × 5.0 mm )

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ITF

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER

文件：35.61 Kbytes 頁(yè)數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

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Silicon Diode

Description The FMXA-2202S is a fast recovery diode of 200 V / 20 A. The maximum trr of 25 ns is realized by optimizing a life-time control. Features ● VRM------------------------------------------------------ 200 V ● IF(AV)-------------------------------------------------------20 A ● VF-----

文件：154.51 Kbytes 頁(yè)數(shù)：5 Pages

SANKEN

三墾

Silicon Diode

文件：154.81 Kbytes 頁(yè)數(shù)：5 Pages

SANKEN

三墾

Integrated Load Switch with 500mA High Precision Current Limit

General Description The FPF2200-FPF2202 are low RDS(ON) P-Channel MOSFET load switches with high precision current limit value. The input voltage range operates from 1.8V to 5.5V to fulfill todays Ultra Portable Devices supply requirement. Switch control is by a logic input (ON) capable of interf

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FAIRCHILD

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