This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer.

GENERAL DESCRIPTION This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer. This device is part of a series of mixers offered with high side and/or low side injection options for all UTRA bands. See the Part# Matrix for pin compatible

文件：4.54828 Mbytes 頁(yè)數(shù)：22 Pages

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RF to IF Dual Downconverting Mixer

FEATURES ? Dual Path for Diversity Systems ? Ideal for Multi-Carrier Systems ? MIMO friendly: -6 dBm min LO drive ? 9 dB Gain ? Ultra linear: +41 dBm IP3O (350 MHz IF) ? Low NF ~10 dB ? 200 @ output impedance ? Ultra high +13 dBm P1dBI ? Pin Compatible w/Existing solutions ? 6x6 36 pin p

文件：1.65894 Mbytes 頁(yè)數(shù)：18 Pages

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RF to IF Dual Downconverting Mixer

FEATURES ? Dual Path for Diversity Systems ? Ideal for Multi-Carrier Systems ? 8.5 dB Gain (200 MHz IF) ? Ultra linear +38 dBm IP3O (350 MHz IF) ? Ultra linear +40 dBm IP3O (200 MHz IF) ? Low NF

文件：2.84034 Mbytes 頁(yè)數(shù)：27 Pages

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RF to IF Dual Downconverting Mixer

FEATURES ? Dual Path for Diversity Systems ? Ideal for Multi-Carrier Systems ? 8.5 dB Gain ? Ultra linear +43 dBm IP3O ? Low NF

文件：2.76042 Mbytes 頁(yè)數(shù)：21 Pages

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RF to IF Dual Downconverting Mixer

FEATURES ? Dual Path for Diversity Systems ? Ideal for Multi-Carrier Systems ? 8.9 dB Gain ? Ultra linear +43 dBm IP3O ? Low NF

文件：3.55302 Mbytes 頁(yè)數(shù)：27 Pages

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：43.4 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：45.52 Kbytes 頁(yè)數(shù)：2 Pages

POLYFET

This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer.

GENERAL DESCRIPTION This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer. This device is part of a series of mixers offered with high side and/or low side injection options for all UTRA bands. See the Part# Matrix for pin compatible

文件：4.54828 Mbytes 頁(yè)數(shù)：22 Pages

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Dual Path Lowband RF Receiver 1400MHz to 2700MHz

DESCRIPTION This document describes the specifications for the F1180 Dual Path RF Receiver consisting of an RF Amplifier w/bypass function, Digital Step Attenuator (DSA), and RF Mixer in each signal path. Applications include Multi-mode, Multi-carrier BaseStation Receivers & Repeaters. The F

文件：2.10444 Mbytes 頁(yè)數(shù)：43 Pages

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Dual Path Lowband RF Receiver 1400MHz to 2700MHz

DESCRIPTION This document describes the specifications for the F1180 Dual Path RF Receiver consisting of an RF Amplifier w/bypass function, Digital Step Attenuator (DSA), and RF Mixer in each signal path. Applications include Multi-mode, Multi-carrier BaseStation Receivers & Repeaters. The F

文件：2.10444 Mbytes 頁(yè)數(shù)：43 Pages

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