This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer.

GENERAL DESCRIPTION This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer. This device is part of a series of mixers offered with high side and/or low side injection options for all UTRA bands. See the Part# Matrix for pin compatible

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RF to IF Dual Downconverting Mixer

FEATURES ? Dual Path for Diversity Systems ? Ideal for Multi-Carrier Systems ? 8.9 dB Gain ? Ultra linear +43 dBm IP3O ? Low NF

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RF to IF Dual Downconverting Mixer

FEATURES ? Dual Path for Diversity Systems ? Ideal for Multi-Carrier Systems ? MIMO friendly: -6 dBm min LO drive ? 9 dB Gain ? Ultra linear: +41 dBm IP3O (350 MHz IF) ? Low NF ~10 dB ? 200 @ output impedance ? Ultra high +13 dBm P1dBI ? Pin Compatible w/Existing solutions ? 6x6 36 pin p

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RF to IF Dual Downconverting Mixer

FEATURES ? Dual Path for Diversity Systems ? Ideal for Multi-Carrier Systems ? 8.5 dB Gain (200 MHz IF) ? Ultra linear +38 dBm IP3O (350 MHz IF) ? Ultra linear +40 dBm IP3O (200 MHz IF) ? Low NF

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet? process features gold metal for greatly extended lifetim

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Basic Contact Probes

General Design Basic Contact Probe Family F111 Pitch [mm/mil] 1.27 / 50 Temperature [C°] -45°C...+80°C

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

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