3300 W bridgeless totem-pole PFC with CoolSiC?, CoolMOS?, and XMC? digital control

Summary of Features SiC-based totem-pole PFC Highest eff iciency with CoolMOS? andCoolSiC? SMD solution for high power density Digital control enabled by XMC1402

文件：677.37 Kbytes 頁數(shù)：9 Pages

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英飛凌

DC to 18 GHz, Ultra Wideband, Dual Rank, 4 GSPS Track-and-Hold Amplifier

FEATURES 18 GHz input sampling bandwidth (1 V p-p full-scale) 4 GSPS maximum sampling rate 67 dB SFDR at 4 GHz and 0.5 V p-p input and CLK = 1 GSPS) 56 dB SFDR at 4 GHz and 1 V p-p input and CLK = 1 GSPS) Direct coupled input/output Ultra clean output waveforms, minimal glitching ≥65 dB hol

文件：496.3 Kbytes 頁數(shù)：18 Pages

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亞德諾

GaAs, MMIC, SPDT Switch, 10 kHz to 3 GHz

GENERAL DESCRIPTION The HMC221B is a single-pole, double-throw (SPDT) switch specified from 10 kHz to 3 GHz in a 6-lead SOT-23 plastic package. This switch offers a very low insertion loss of less than 0.8 dB up to 3 GHz and is well suited for receiver and filter switching applications that requi

文件：265.46 Kbytes 頁數(shù)：9 Pages

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亞德諾

Cellular infrastructure

GENERAL DESCRIPTION The HMC832 is a 3.3 V, high performance, wideband, fractional-N, phase-locked loop (PLL) that features an integrated voltage controlled oscillator (VCO) with a fundamental frequency of 1500 MHz to 3000 MHz, and an integrated VCO output divider (divide by 1/2/4/6/…60/62), that

文件：1.17008 Mbytes 頁數(shù)：49 Pages

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亞德諾

Dual-channel 12-bit 40Msps 215mW A/D converter

Features ■ Low power consumption: 215 mW@40 Msps ■ Single supply voltage: 2.5 V ■ Independent supply for CMOS output stage with 2.5 V/3.3 V capability ■ SFDR = -75 dBc @ Fin = 10 MHz ■ 1GHz analog bandwidth track-and-hold ■ Common clocking between channels ■ Dual simultaneous sample and ho

文件：452.03 Kbytes 頁數(shù)：30 Pages

STMICROELECTRONICS

意法半導體

Single-channel isolated gate driver IC

Features ? Single-channel galvanically isolated coreless transformer based gate driver ? Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options ? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs ? Up to 6.5 A typical peak output current ? 40

文件：2.10373 Mbytes 頁數(shù)：51 Pages

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英飛凌

Single-channel isolated gate driver IC

Features ? Single-channel galvanically isolated coreless transformer based gate driver ? Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options ? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs ? Up to 6.5 A typical peak output current ? 40

文件：2.10373 Mbytes 頁數(shù)：51 Pages

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英飛凌

Single-channel isolated gate driver IC

Features ? Single-channel galvanically isolated coreless transformer based gate driver ? Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options ? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs ? Up to 6.5 A typical peak output current ? 40

文件：2.10373 Mbytes 頁數(shù)：51 Pages

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英飛凌

Single-channel isolated gate driver IC

Features ? Single-channel galvanically isolated coreless transformer based gate driver ? Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options ? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs ? Up to 6.5 A typical peak output current ? 40

文件：2.10373 Mbytes 頁數(shù)：51 Pages

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英飛凌

EiceDRIVER? F3 Enhanced (1ED332x) – Single- channel isolated gate driver family with short-circuit protection

Features ? For up to 2300 V IGBTs, SiC and Si MOSFETs ? +6 A / -8.5 A typical sinking and sourcing peak output current ? Precise VCEsat detection (DESAT) with fault output ? Soft turn-off after desaturation detection ? Active Miller Clamp ? 40 V absolute maximum output supply voltage ? 85 n

文件：1.79535 Mbytes 頁數(shù)：8 Pages

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英飛凌