ESD Protection Diode

文件：176.66 Kbytes 頁數(shù)：11 Pages

ONSEMI

安森美半導體

ESD Protection Diode

文件：176.66 Kbytes 頁數(shù)：11 Pages

ONSEMI

安森美半導體

N-Channel PowerTrench? MOSFET 30 V, 120 A, 1.8 m廓

文件：318.49 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

N-Channel PowerTrench? MOSFET 30 V, 175 A, 1.8 mΩ

Features Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery MSL1 Robust Package Design 100

文件：433.96 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

N-Channel Enhancement MOSFET

Application o Load switch ? High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate ? DCIDC Power Supplies

文件：2.6273 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子