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                >EN29F040>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    EN29F040A-55TIP
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70JC
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70JCP
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70JI
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70JIP
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70PC
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70PCP
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70PI
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70PIP
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    EN29F040A-70TC
    4 Megabit (512K x 8-bit) Flash Memory
    
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur
    文件：273.37 Kbytes 頁數(shù)：35 Pages
    EON
    宜揚(yáng)科技
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號：
      EN29F040
    • 功能描述：
      4 Megabit(512K x 8-bit) Flash Memory 
    
            
    
        
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價格
    
                
    



    EON
    		

    24+
    		

    TSSOP-32
    		

    1458
    		

    		
詢價
    

    



    EON
    		

    22+
    		

    PLCC32
    		

    2000
    		

    進(jìn)口原裝!現(xiàn)貨庫存
    		
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    EON
    		

    2023+
    		

    TSSOP-32
    		

    50000
    		

    原裝現(xiàn)貨
    		
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    EON
    		

    24+
    		

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    只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
    		
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    EON
    		

    25+
    		

    PLCC32
    		

    1890
    		

    ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
    		
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    2016+
    		

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    EON
    		

    23+
    		

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    5000
    		

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    25+
    		

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    353
    		

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    更多EN29F040供應(yīng)商
            更新時間2026-1-22 16:30:00
        
    
        
    
          
    
            
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