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首頁(yè) >EN29F040>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
EN29F040-55P	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-55PI	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-55T	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-55TI	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-70J	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-70JI	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-70P	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-70PI	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-70T	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC
EN29F040-70TI	文件：223.38 Kbytes Page：32 Pages	4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 文件：223.38 Kbytes 頁(yè)數(shù)：32 Pages	ETCList of Unclassifed Manufacturers 未分類(lèi)制造商	ETC

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詳細(xì)參數(shù)

型號(hào)：
EN29F040
功能描述：
4 Megabit(512K x 8-bit) Flash Memory

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線(xiàn)半導(dǎo)體有限公司	EN29F040	EON	24+	TSSOP-32	1458		詢(xún)價(jià)
深圳市壹芯創(chuàng)科技有限公司	EN29F040	EON	22+	PLCC32	2000	進(jìn)口原裝!現(xiàn)貨庫(kù)存	詢(xún)價(jià)
深圳市宏捷佳電子科技有限公司	EN29F040	EON	2023+	TSSOP-32	50000	原裝現(xiàn)貨	詢(xún)價(jià)
深圳市富芯樂(lè)電子科技有限公司	EN29F040	EON	24+	PLCC	2500	只做原裝正品現(xiàn)貨歡迎來(lái)電查詢(xún)15919825718	詢(xún)價(jià)
深圳市福安甌科技有限公司	EN29F040-70J	EON	25+	PLCC32	1890	⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢(xún)!⊙	詢(xún)價(jià)
芯有半導(dǎo)體（深圳）有限公司	EN29F040A-70PC	EON	05/06+	DIP	9968	全新原裝100真實(shí)現(xiàn)貨供應(yīng)	詢(xún)價(jià)
深圳市凌旭科技有限公司	EN29F040-70J	EON	2016+	PLCC	1800	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢(xún)價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	EN29F040A-70PC	EON	25+	DIP32	18000	原廠直接發(fā)貨進(jìn)口原裝	詢(xún)價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	EN29F040A-70JCC	EON	23+	PLCC-32	5000	原裝正品,假一罰十	詢(xún)價(jià)
深圳市卓越微芯電子有限公司	EN29F040A-70TCP	EON	25+	TSSOP-3	353	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢(xún)價(jià)

更多EN29F040供應(yīng)商更新時(shí)間2026-1-20 16:30:00

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