絲印：EDE；Package：SMC；5000 W TVS in SMC

Features ? Peak pulse power: – 5000 W (10/1000 μs) – up to 48 kW (8/20 μs) ? Stand-off voltage range from 5 V to 100 V ? Unidirectional type ? Low leakage current: 0.2 μA at 25 °C ? Operating Tj max: 175 °C ? JEDEC registered package outline ? Resin meets UL94, V0 ? Lead finishing: matte

文件：484.31 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

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絲印：EDEY；Package：SMA；Automotive 5000 W TVS in SMC

Features ? AEC-Q101 qualified ? Peak pulse power: – 5000 W (10/1000 μs) – up to 48 kW (8/20 μs) ? Stand-off voltage range from 5 V to 100 V ? Unidirectional and bidirectional types ? Low leakage current: 0.2 μA at 25 °C ? Operating Tj max: 175 °C ? JEDEC registered package outline ? Lead

文件：1.88727 Mbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/edey/marking.html">EDEY；Package：SMA；Automotive 5000 W TVS in SMC

Features ? AEC-Q101 qualified ? Peak pulse power: – 5000 W (10/1000 μs) – up to 48 kW (8/20 μs) ? Stand-off voltage range from 5 V to 100 V ? Unidirectional and bidirectional types ? Low leakage current: 0.2 μA at 25 °C ? Operating Tj max: 175 °C ? JEDEC registered package outline ? Lead

文件：1.88727 Mbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package. Features ? Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 頁數(shù)：65 Pages

ELPIDA

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1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package. Features ? Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 頁數(shù)：65 Pages

ELPIDA

爾必達(dá)

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package. Features ? Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 頁數(shù)：65 Pages

ELPIDA

爾必達(dá)

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package. Features ? Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 頁數(shù)：65 Pages

ELPIDA

爾必達(dá)

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package. Features ? Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 頁數(shù)：65 Pages

ELPIDA

爾必達(dá)

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package. Features ? Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 頁數(shù)：65 Pages

ELPIDA

爾必達(dá)

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package. Features ? Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 頁數(shù)：65 Pages

ELPIDA

爾必達(dá)