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首頁 >DS1345AB>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
DS1345ABE-100-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABE-70	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABE-70-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABF-100	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABF-100-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABF-70	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABF-70-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABG-100	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABG-100-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM
DS1345ABG-70	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 頁數(shù)：12 Pages	MAXIM 美信	MAXIM

技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
128K x 8
Bus Type：
Parallel
VSUPPLY(V)：
5.25
Package/Pins：
PCAP/34/
BudgetaryPrice：
$16.66 @1k

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	DS1345ABP-70	DALLAS	24+	34pwrcap	217		詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	DS1345ABP-70	DALLAS	05+	34/pwrcap	210	自己公司全新庫存絕對(duì)有貨	詢價(jià)
深圳市粵科源興科技有限公司	DS1345ABP-70IND+	MAXIM	13+	PWRCP	3758	原裝分銷	詢價(jià)
深圳市福田區(qū)綠盛電子商行	DS1345ABP-70	DALLAS	2015+	SOP/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	DS1345ABP-70	DALLAS	23+	SOP8	5000	原裝正品,假一罰十	詢價(jià)
上海專毅電子科技有限公司	DS1345ABP-70	DALLAS	17+	PCB	9800	原裝現(xiàn)貨QQ:547425301手機(jī)17621633780楊小姐	詢價(jià)
上海鑫科潤(rùn)電子科技有限公司	DS1345ABP-70	DALLAS	02+	34/pwrcap	217	原裝現(xiàn)貨海量庫存歡迎咨詢	詢價(jià)
深圳市佳鑫美電子科技有限公司	DS1345ABP-70	DALLAS	25+	34-PCM	2987	只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!	詢價(jià)
上海金慶電子技術(shù)有限公司	DS1345ABP-100	DALLAS	新		11	全新原裝貨期兩周	詢價(jià)
深圳市振宏微科技有限公司	DS1345ABP-70IND+	MAXIM	23+	PWRCP	8888	專做原裝正品,假一罰百!	詢價(jià)

更多DS1345AB供應(yīng)商更新時(shí)間2026-1-21 16:30:00

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