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首頁 >DS1250AB>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
DS1250AB	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250AB	文件：242.48 Kbytes Page：10 Pages	4096k Nonvolatile SRAM 文件：242.48 Kbytes 頁數(shù)：10 Pages	MAXIM 美信	MAXIM
DS1250AB-100	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250AB-70	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250ABP-100-IND	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250ABP-70-IND	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250AB-70+	文件：242.48 Kbytes Page：10 Pages	4096k Nonvolatile SRAM 文件：242.48 Kbytes 頁數(shù)：10 Pages	MAXIM 美信	MAXIM
DS1250AB-70IND+	文件：242.48 Kbytes Page：10 Pages	4096k Nonvolatile SRAM 文件：242.48 Kbytes 頁數(shù)：10 Pages	MAXIM 美信	MAXIM
DS1250ABP-70+	文件：242.48 Kbytes Page：10 Pages	4096k Nonvolatile SRAM 文件：242.48 Kbytes 頁數(shù)：10 Pages	MAXIM 美信	MAXIM
DS1250ABP-70IND+	文件：242.48 Kbytes Page：10 Pages	4096k Nonvolatile SRAM 文件：242.48 Kbytes 頁數(shù)：10 Pages	MAXIM 美信	MAXIM

技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
512K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/32
Smallest Available Pckg. (max w/pins)(mm2)：
596.9
Budgetary Price (See Notes)：
$59.92 @1k

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市安富世紀(jì)電子有限公司	DS1250AB		23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市星辰微電科技有限公司	DS1250AB	ADI	25+	Encapsulated Dual-In-Line Modu	5500	4096k非易失SRAM	詢價
深圳市一線半導(dǎo)體有限公司	DS1250ABP-70IND	DALLAS	24+	DIP	875		詢價
芯有半導(dǎo)體（深圳）有限公司	DS1250ABP-70	DALLAS	05+	原廠原裝	4266	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	DS1250ABP-70IND	DALLAS	23+	34-PCM	5000	原裝正品,假一罰十	詢價
深圳市粵科源興科技有限公司	DS1250AB-70IND+	MAXIM	13+	MOD	3758	原裝分銷	詢價
深圳市弘為電子有限公司	DS1250AB-70	MAX/DALL	24+	原廠封裝	4612	原裝現(xiàn)貨假一罰十	詢價
諦輝(北京/上海/青島 )電子科技有限公司	DS1250ABP-100IND		25+	DIP-16P	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價
深圳市歐立現(xiàn)代科技有限公司	DS1250ABP-100+	DALLAS	24+		12	原裝現(xiàn)貨,可開13%稅票	詢價
深圳市利加科技有限公司	DS1250AB-70IND	DALLAS/Maxim	16+	DIP32	8800	進(jìn)口原裝大量現(xiàn)貨熱賣中	詢價

更多DS1250AB供應(yīng)商更新時間2026-1-21 15:01:00

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